Nd:YVO4 is one of the most promising commercially available diode pumped solid state laser materials. It has high laser induced damage threshold and good mechanical in addition to optical properties. Its large stimulated emission cross-section and high absorption of pump laser make it a right crystal for pocket laser. Nd: YVO4 can produce IR green and blue laser by using minor different set-up. A broad absorption band centered at 808nm and favorable mechanical properties make Nd:YVO4 well suited for compact, efficient, high power diode-pumped lasers. Natural birefringence gives rise to a highly polarized output at 1064.3 and 1342nm.
Atomic Density:
|
1.26x1020 atoms/cm3 (Nd1.0%)
|
Crystal Structure:
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Zircon Tetragonal, space group D4h-I4/amd
a=b=7.1193A,c=6.2892A |
Density;
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4.22g/cm3
|
Mohs Hardness:
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4-5(Glass-like)
|
Thermal Expansion Coefficient(300K):
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αa=4.43x10-6/K
αc=11.37x10-6/K |
Thermal Conductivity Coefficient(300K):
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//C:0.0523W/cm/K
⊥C:0.0510W/cm/K |
Lasing wavelength:
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1064nm,1342nm
|
Thermal optical coefficient (300K):
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dno/dT=8.5×10-6/K
dne/dT=2.9×10-6/K |
Stimulated emission cross-section:
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25×10-19cm2 @ 1064nm
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Fluorescent lifetime:
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90μs(1% Nd doping)
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Absorption coefficient:
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31.4cm-1 @810nm
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Intrinsic loss:
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0.02cm-1 @1064nm
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Gain bandwidth:
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0.96nm@1064nm
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Polarized laser emission:
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π polarization; parallel to optic axis(c-axis)
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Diode pumped optical to optical efficiency:
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>60%
|
Sellemeier equations (λ in um)
|
n02=3.77834+0.069736/(λ2-0.04724)-0.010813λ2
ne2=4.59905+0.110534/(λ2-0.04813)-0.012676λ2
|
Laser crystal
|
Doping
(atm%) |
σ
(x10-19cm2) |
α
(cm-1) |
τ
(µs) |
Lα (mm)
|
Pth
(mW) |
Effi.
(%) |
Nd:YVO4
(a-cut) |
1.0
2.0 |
25
25 |
23
46 |
90
50 |
0.32
0.14 |
30
78 |
52
48.6 |
Nd:YVO4
(c-cut) |
1.1
|
7
|
9.2
|
90
|
|
231
|
45.5
|
Nd:YAG
|
0.85
|
6
|
7.1
|
230
|
1.41
|
115
|
38.6
|
Doping
|
0.07%~3%
|
Doping concentration tolerance
|
±0.05%(atm%<1%),±0.1%(atm%≥1%)
|
Orientation
|
A-cut/C-cut +/-0.5deg.
|
Dimension Tolerance
|
±0.1mm
|
Flatness
|
λ/10 @ 632.8nm
|
Wavefront distortion
|
λ/6@ 632.8nm
|
Surface Quality
|
10/5 per MIL-O-13830B
|
Parallelism
|
10″
|
Perpendicularity
|
10′
|
Bevel/Chamfer
|
<0.1mm@45deg.
|
Chips
|
<0.1mm
|
Clear Aperture
|
>95%
|
Coating
|
AR/HR/PR coating upon customer’s request
|
Damage Threshold
|
750MW/CM2 at 1064nm, TEM00, 10ns, 10Hz
|
Quality Warranty Period
|
One year under proper use
|