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Ce:YAG is a fast scintillator with excellent mechanical and chemical resistance. Ce:YAG scintillation detectors are preferred for electron microscopy, beta and X-ray counting, as well as for electron and X-ray imaging screens. The material's mechanical properties enable production of thin screens down to 0.005 mm thick. Does not degrade when bombarded by electrons or ions, thus making Ce:YAG suitable for high current operations. Light emission peaks at about 560nm (yellow) which means that an S20 photomultiplier is most suitable for detecting the emission. Response is better for Ce:YAG than for Planotec P47 discs below 5kV and again at higher accelerating voltages over 100kV, where the performance of powder scintillators falls off while Ce:YAG response increases linearly. Although the signal from Ce:YAG and Ce:YAP is less than the P47, the S/N ratio is better and therefore the final signal is better. Decay time approx. 60 nanoseconds. The side towards the light guide is micro-textured to increase light emission. Can be cleaned (polished) and recoated. Best to coat with 50nm Al to avoid light sensitivity.
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Crystal structure
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M3
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Crystal orientation
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<111>
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Unit cell constant
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a=12.01Å
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Density
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4.56（g/cm3）
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Hardness
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8.5（mohs）
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Melt point
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1970℃
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Thermal expansion
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7.8 x 10-6 /℃
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Size（mm）
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25×25×0.5mm、10×10×0.5mm、10×5×0.5mm、5×5×0.5mm
Special size and orientation are available upon request
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Surface rough
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Surface roughness(Ra):<=5A
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Polishing
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Single or double
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Pack
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100 clean bag，1000 exactly clean bag
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Dopant concentration
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Ce:( 0.1 ~ 1.2) atm%±0.1%
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Orientation:
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<111> or <100]> crystalline within ±05°
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Wavefront distortion :
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l /8 per inch @ 633 nm
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Dimension Tolerances
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Rods with diameter: ±0.05 mm , Length: ±0.5 mm
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Surface quality:
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10/5 Scratch / Digper MIL-O-1380A
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Parallelism:
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< 10 arc seconds
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Perpendicularity:
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< 5 arc minutes
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Flatness:
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< l /10 @ 633 nm
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chamfer:
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<0.1 mm @ 45deg.
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Barrel Finish:
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50-80 micro-inch (RMS) ,
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Coating
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AR,HR,AI coating are available
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